This paperÌýoutlinesÌýthe necessary attributesÌýfor successful semiconductor manufacturingÌýof PFAS used in plasma etch and deposition, including but not limited to reaction rates and selectivity and surface reaction characteristics.ÌýAdditionally, this paperÌýdiscussesÌýnon-PFAS alternative compounds where available, as well as efforts to develop alternatives.ÌýFinally,Ìýwe’llÌýexplore theÌýpotential release/exposure pathways of these materials from semiconductor fabrication (fab)Ìýfacilities and mitigation options.Ìý
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